Thank You! The section "Resolution in projection systems" in the above wikipedia link (https://en.wikipedia.org/wiki/Photolithography#Resolution_in...) contains the essential info. It lists the same exact equation which i have linked to in my comment and adds further details, to whit;
The minimum feature size that a projection system can print is given approximately by:
CD = k1 ⋅ λ / N A
where CD is the minimum feature size (also called the critical dimension, target design rule, or "half-pitch"), λ is the wavelength of light used, and NA is the numerical aperture of the lens as seen from the wafer.
k1 (commonly called k1 factor) is a coefficient that encapsulates process-related factors and typically equals 0.4 for production. (k1 is actually a function of process factors such as the angle of incident light on a reticle and the incident light intensity distribution. It is fixed per process.) The minimum feature size can be reduced by decreasing this coefficient through computational lithography.
According to this equation, minimum feature sizes can be decreased by decreasing the wavelength, and increasing the numerical aperture (to achieve a tighter focused beam and a smaller spot size).
Thus the NA being increased in Hyper-NA (0.75) from High-NA (0.55) results in a smaller "feature size" i.e. smaller nanometers.
I need to read some more but i think i now get the basic Physics concepts involved.
The minimum feature size that a projection system can print is given approximately by:
where CD is the minimum feature size (also called the critical dimension, target design rule, or "half-pitch"), λ is the wavelength of light used, and NA is the numerical aperture of the lens as seen from the wafer.k1 (commonly called k1 factor) is a coefficient that encapsulates process-related factors and typically equals 0.4 for production. (k1 is actually a function of process factors such as the angle of incident light on a reticle and the incident light intensity distribution. It is fixed per process.) The minimum feature size can be reduced by decreasing this coefficient through computational lithography.
According to this equation, minimum feature sizes can be decreased by decreasing the wavelength, and increasing the numerical aperture (to achieve a tighter focused beam and a smaller spot size).
Thus the NA being increased in Hyper-NA (0.75) from High-NA (0.55) results in a smaller "feature size" i.e. smaller nanometers.
I need to read some more but i think i now get the basic Physics concepts involved.